SI2304DS
v ds (v) r ds(on) ( ) i d (a) 30 0.117 @ v gs = 10 v 2.5 30 0.190 @ v gs = 4.5 v 2.0 g s d top view 2 3 to-236 (sot-23) 1 SI2304DS (a4)* *marking code
parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current (t j = 150 c) a t a = 25 c i d 2.5 a continuous drain current (t j = 150 c) a t a = 70 c i d 2.0 a pulsed drain current b i dm 10 a continuous source current (diode conduction) a i s 1.25 power dissipation a t a = 25 c p d 1.25 w power dissipation a t a = 70 c p d 0.80 w operating junction and storage temperature range t j , t stg 55 to 150 c
parameter symbol limit unit maximum junction-to-ambient a r thja 100 c/w maximum junction-to-ambient c r thja 166 c/w notes a. surface mounted on fr4 board, t 5 sec. b. pulse width limited by maximum junction temperature. c. surface mounted on fr4 board. 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
0.117
limits parameter symbol test conditions min typ max unit static drain-source breakdown voltage v( br)dss v gs = 0 v, i d = 250 a 30 v gate-threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.5 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zgvl dic i v ds = 30 v, v gs = 0 v 0.5 a zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v, t j = 55 c 10 a v ds = 30 v, v gs = 1.0 v, t j =25 c 1 on - state drain current a i d(on) v ds 4.5 v, v gs = 10 v 6 a on - state drain current a i d(on) v ds 4.5 v, v gs = 4.5 v 4 a drain - source on - resistance a r ds(on) v gs = 10 v, i d = 2.5 a 0.092 drain - source on - resistance a r ds(on) v gs = 4.5 v, i d = 2.0 a 0.142 0.190 forward transconductance a g fs v ds = 4.5 v, i d = 2.5 a 4.6 s diode forward voltage v sd i s = 1.25 a, v gs = 0 v 0.77 1.2 v dynamic gate charge q g v ds = 15 v, v gs = 5 v, i d = 2.5 a 2.4 4 c total gate charge q gt v 15v v 10v i 25a 4.5 10 nc gate-source charge q gs v ds = 15 v, v gs = 10 v, i d = 2.5 a 0.8 nc gate-drain charge q gd 1.0 input capacitance c iss v 15v v 0v f 1mh 240 f output capacitance c oss v ds = 15 v, v gs = 0 v, f = 1 mhz 110 pf reverse transfer capacitance c rss 17 switching turn-on delay time t d(on) v15vr15 8 20 rise time t r v dd = 15 v, r l = 15 i 1 a v 10 v r 6 12 30 ns turn-off delay time t d(off) dd , l i d 1 a, v gen = 10 v, r g = 6 17 35 ns fall-time t f 8 20 notes a. pulse test: pw 300 s duty cycle 2%. 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com SI2304DS product specification
|
